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FSR1110D, FSR1110R
Data Sheet March 2000 File Number 4828.1
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.
Features
* 1.0A, 100V, rDS(ON) = 0.680 * Contains Four Isolated and Independent N-Channel MOSFETs * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM * Photo Current - 0.3nA Per-RAD(Si)/s Typically * Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2
Packaging
14 PIN DIP
Ordering Information
RAD LEVEL 10K 100K 100K SCREENING LEVEL Commercial TXV Space PART NUMBER/BRAND FSR1110D1 FSR1110R3 FSR1110R4
D3 1 14 D2 13 S2 12 G2 11 NC 10 G1 9 S1 8 D1
Pinout
Formerly available as type TA45032.
S3 2
Symbol
D
G3 3 NC 4 G4 5 S4 6 G D4 7 S
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000
FSR1110D, FSR1110R
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified FSR1110D, FSR1110R Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) 100 100 1.0 0.6 3.0 20 1.25 0.5 0.01 3.0 1.0 3.0 -55 to 150 300 UNITS V V A A A V W W W/ oC A A A oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC MIN 100 1.5 0.5 VGS = 0V to 20V VGS = 0V to 12V VGS = 0V to 2V VDD = 50V, ID = 1.0A ID = 1.0A, VDS = 15V VDS = 25V, VGS = 0V, f = 1MHz TYP 0.570 8.7 1.4 4.2 6 155 70 20 MAX 5.0 4.0 25 250 100 200 0.71 0.680 1.09 15 15 25 20 14 9.7 0.54 1.7 4.7 100 UNITS V V V V A A nA nA V ns ns ns ns nC nC nC nC nC V pF pF pF
oC/W
Drain to Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current
IDSS
VDS = 80V, VGS = 0V VGS = 20V
Gate to Source Leakage Current
IGSS
Drain to Source On-State Voltage Drain to Source On Resistance
VDS(ON) rDS(ON)12
VGS = 12V, ID = 1.0A ID = 0.6A, VGS = 12V
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Charge at 12V Threshold Gate Charge Gate Charge Source Gate Charge Drain Plateau Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Ambient
td(ON) tr td(OFF) tf Qg(TOT) Qg(12) Qg(TH) Qgs Qgd V(PLATEAU) CISS COSS CRSS RJA
VDD = 50V, ID = 1.0A, RL = 50, VGS = 12V, RGS = 7.5
2
FSR1110D, FSR1110R
Source to Drain Diode Specifications
PARAMETER Forward Voltage Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS ISD = 1.0A ISD = 1.0A, dISD/dt = 100A/s TC = 25oC, Unless Otherwise Specified SYMBOL (Note 3) (Note 3) (Notes 2, 3) (Note 3) (Notes 1, 3) (Notes 1, 3) BVDSS VGS(TH) IGSS IDSS VDS(ON) rDS(ON)12 TEST CONDITIONS VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = 20V, VDS = 0V VGS = 0, VDS = 80V VGS = 12V, ID = 1.0A VGS = 12V, ID = 0.6A MIN 100 1.5 MAX 4.0 100 25 0.710 0.680 UNITS V V nA A V MIN 0.6 TYP MAX 1.8 110 UNITS V ns
Electrical Specifications up to 100K RAD
PARAMETER Drain to Source Breakdown Volts Gate to Source Threshold Volts Gate to Body Leakage Zero Gate Leakage Drain to Source On-State Volts Drain to Source On Resistance NOTES: 1. Pulse test, 300s Max. 2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS .
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5) TEST Single Event Effects Safe Operating Area SYMBOL SEESOA ION SPECIES Ni Br Br Br NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 28 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) -20 -10 -15 -20 (NOTE 6) MAXIMUM VDS BIAS (V) 100 100 80 50
3
FSR1110D, FSR1110R Typical Performance Curves
LET = 26MeV/mg/cm2, RANGE = 43 LET = 37MeV/mg/cm2, RANGE = 36 FLUENCE = 1E5 IONS/cm2 (TYPICAL) LIMITING INDUCTANCE (HENRY) 1E-3
120 100 80 VDS (V) 60 40 20 0 0
1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6
TEMP = 25oC -5 -10 VGS (V) -15 -20 -25
1E-7 10
30
100 DRAIN SUPPLY (V)
300
1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS
10
1.2 1.0 0.8 0.6 0.4 0.2 0 -50 ID , DRAIN CURRENT (A)
TC = 25oC
ID , DRAIN (A)
1
5ms
10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON)
50ms 100 1000
0
50
100
150
0.1 0.1
1
10
TC , CASE TEMPERATURE (oC)
VDS , DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5 PULSE DURATION = 250ms,VGS = 12V, ID = 0.6A 2.0
12V
QG
NORMALIZED rDS(ON)
1.5
QGS VG
QGD
1.0
0.5
CHARGE
0.0 -80
-40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
4
FSR1110D, FSR1110R Typical Performance Curves (Continued)
10 THERMAL MATRIX T1 1 0.5 0.2 0.1 0.05 0.02 0.01 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 0.001 10-4 10-3 10-2 10-1 100 101 t1 t2 102 103 SINGLE PULSE PDM T2 T3 T4
=
THERMAL RESPONSE (ZJC)
P1 .73P1 .73P1 .73P1
.73P2 P2 .73P2 .73P2
.73P3 .73P3 P3 .73P3
.73P4 .73P4 .73P4 P4 _ * [R0JA]
0.1
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
10 IAS , AVALANCHE CURRENT (A)
STARTING TJ = 25oC 1
STARTING TJ = 150oC
0.01 0.1
IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 tAV, TIME IN AVALANCHE (ms) 10
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
5
FSR1110D, FSR1110R Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L + CURRENT I TRANSFORMER AS BVDSS tP IAS 50 + VDD VDS VDD
-
VARY tP TO OBTAIN REQUIRED PEAK IAS VGS 20V
DUT 50V-150V 50 tAV
0V
tP
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
VDD
tON td(ON)
tOFF td(OFF) tr tf 90%
RL VDS VGS = 12V DUT 0V RGS
VDS
90%
10%
10%
90% VGS 10% 50% PULSE WIDTH 50%
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
6
FSR1110D, FSR1110R Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER Gate to Source Leakage Current Zero Gate Voltage Drain Current Drain to Source On Resistance Gate Threshold Voltage NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. SYMBOL IGSS IDSS rDS(ON) VGS(TH) TEST CONDITIONS VGS = 20V VDS = 80% Rated Value TC = 25oC at Rated ID ID = 1.0mA MAX 20 (Note 7) 25 (Note 7) 20% (Note 8) 20% (Note 8) UNITS nA A V
Screening Information
TEST Unclamped Inductive Switching Thermal Response Gate Stress Pind Pre Burn-In Tests (Note 9) Steady State Gate Bias (Gate Stress) Interim Electrical Tests (Note 9) Steady State Reverse Bias (Drain Stress) PDA Final Electrical Tests (Note 9) NOTE: 9. Test limits are identical pre and post burn-in. JANTXV EQUIVALENT VGS(PEAK) = 15V, L = 0.1mH; Limit = 3.0A JANS EQUIVALENT VGS(PEAK) = 15V, L = 0.1mH; Limit = 3.0A
tH = 100ms; VH = 15V; IH = 0.15A; LIMIT = 62mV tH = 100ms; VH = 15V; IH = 0.15A; LIMIT = 62mV VGS = 30V, t = 250s Optional MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours 10% MIL-S-19500, Group A, Subgroup 2 VGS = 30V, t = 250s Required MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours 5% MIL-S-19500, Group A, Subgroups 2 and 3
Additional Tests
PARAMETER Safe Operating Area Thermal Impedance SYMBOL SOA VSD TEST CONDITIONS VDS = 80V, t = 10ms tH = 500ms; VH = 13V; IH = 0.50A MAX 0.58 260 UNITS A mV
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FSR1110D, FSR1110R Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
1. RAD HARD TXV EQUIVALENT - STANDARD DATA PACKAGE
A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A E. Group B F. Group C G. Group D - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet
Class S - Equivalents
1. RAD HARD "S" EQUIVALENT - STANDARD DATA PACKAGE
A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F. Group A G. Group B H. Group C I. Group D - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA PACKAGE
A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data D. Group A E. Group B - Attributes Data Sheet - Group A Lot Traveler - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data
2. RAD HARD MAX. "S" EQUIVALENT - OPTIONAL DATA PACKAGE
A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data
F. Group C
G. Group D
G. Group B
H. Group C
I. Group D
8
FSR1110D, FSR1110R MO-036AB
14 LEAD CERAMIC SIDE LEADED DUAL IN LINE PACKAGE (DIP)
14 8
INCHES SYMBOL A A1 b b1 c MIN 0.290 0.280 0.015 0.038 0.008 0.105 0.730 0.290 MAX 0.325 0.310 0.021 0.060 0.012 0.175 0.770 0.325
MILLIMETERS MIN 7.37 7.12 0.38 0.97 0.21 2.67 18.55 7.37 MAX 8.25 7.87 0.53 1.52 0.30 4.44 19.55 8.25 NOTES 3 2 2 3
1 INDEX MARK
7
D E e
E
H1
e1 e2 H1 L L1
0.100 Typ. 0.600 BSC 0.010 0.125 0.025 0o 0.175 0.055 15o
2.54 Typ. 15.24 BSC 0.25 3.18 0.64 0o 4.44 1.39 15o
D
L1
M
L
e1 e2
SEATING PLANE A A1
b1
b
NOTES: 1. These dimensions are within allowable dimensions of Rev. A of JEDEC MO-036AB outline dated 4-81. 2. Position of leads to be measured a maximum of 0.030 (0.76mm) from bottom of Seating Plane. 3. Applies to spread of leads prior to installation. 4. Controlling dimension: Inch. 5. Revision 1 dated 1-00.
c M
e
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
9

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